DOPANT DIFFUSION FROM ION-IMPLANTED TASI2 INTO SI

被引:9
作者
GIERISCH, H [1 ]
NEPPL, F [1 ]
FRENZEL, E [1 ]
EICHINGER, P [1 ]
HIEBER, K [1 ]
机构
[1] FRAUNHOFER INST FESTKORPERTECHNOL,D-8000 MUNICH 60,FED REP GER
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 02期
关键词
D O I
10.1116/1.583940
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:508 / 514
页数:7
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