DOPANT DIFFUSION FROM ION-IMPLANTED TASI2 INTO SI

被引：9

作者：

GIERISCH, H ^{[1
]}

NEPPL, F ^{[1
]}

FRENZEL, E ^{[1
]}

EICHINGER, P ^{[1
]}

HIEBER, K ^{[1
]}

机构：

[1] FRAUNHOFER INST FESTKORPERTECHNOL,D-8000 MUNICH 60,FED REP GER

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 02期

关键词：

D O I：

10.1116/1.583940

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：508 / 514

页数：7

共 10 条

[1] EICHINGER P, 1984, MATER RES SOC S P, V25, P165
[2] EICHINGER P, IN PRESS
[3] FRENZEL H, 1985, 5TH INT C ION MASS S
[4] GIERISCH H, 1985 ESSDERC AACH
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[6] INFLUENCE OF SLIGHT DEVIATIONS FROM TASI2 STOICHIOMETRY ON THE HIGH-TEMPERATURE STABILITY OF TANTALUM SILICIDE SILICON CONTACTS
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4036 - 4042
[8] CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS
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[J]. SOLID-STATE ELECTRONICS, 1976, 19 (06) : 537 - 543
[9] Shone F. C., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P407
[10] EFFECT OF DOPANT IMPLANTATION ON THE PROPERTIES OF TASI2 POLY-SI COMPOSITES
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RETAJCZYK, TF
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (03): : 846 - 852