SILICON DELTA-DOPED ALGAAS BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY

被引:6
作者
RITCHIE, DM
DIPAOLA, A
TROMBY, M
DELLAGIOVANNA, M
DIEGIDIO, M
VIDIMARI, F
机构
[1] ALCATEL-TELETTRA Research Center, I-20059 Vimercate, MI
关键词
D O I
10.1016/0022-0248(94)91090-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Delta doping of Si in Al0.22Ga0.78As by low pressure metalorganic vapor phase epitaxy has been explored for growth interruption times ranging from 10 to 60 s and for varying SiH4 partial pressures of 7.8 x 10(-4) and 1.2 x 10(-3) mbar. The resultant sheet concentrations were linear with both time and SiH4 content up to saturation at 3.6 x 10(12) cm(-2). The full width at half maximum versus sheet concentration was found to correspond to theoretical predictions, indicating the absence of diffusion, with a minimum value of 60 Angstrom for a sheet concentration of 3.6 x 10(12) cm(-2). For Si doses higher than 1 x 10(-2) ml SiH4, an increase in full width at half maximum (FWHM) was observed. Pseudomorphic high electron mobility transistor device results show a 300 K channel mobility of 3030 cm(2)/V.s with a sheet concentration of 2.7 x 10(12) cm(-2). The maximum extrinsic transconductance of such devices was 400 mS/mm with a corresponding saturation current of 360 mA/mm for 0.5 mu m gate length devices.
引用
收藏
页码:447 / 454
页数:8
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