SIMULATIONS FOR THE TRANSIENT-RESPONSE OF GRADED ALXGA1-XN SUBMICRON PHOTODETECTORS

被引：11
作者：
JOSHI, RP
机构：
[1] Department of Electrical and Computer Engineering, Old Dominion University, Norfolk
来源：
JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 07期
关键词：
D O I：
10.1063/1.357340
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present Monte Carlo simulations for the dynamic response of a submicron linearly graded Al(x)Ga1-xN metal-semiconductor-metal (MSM) structure, and compare it with a uniform GaN MSM device. Both electron and hole transport, as well as circuit elements are comprehensively included. Our results demonstrate enhancement in speed and frequency bandwidth. The improved response, despite additional alloy and multi-mode scattering, arises from the capability of rapid hole removal from the device. The 20% reduction in the turn-off time for a 0.25 mum device could, in principle, be further enhanced through the use of more complex nonuniform grading profiles.
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页码：4434 / 4436
页数：3
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