LOW-TEMPERATURE HOPPING CONDUCTION IN NEUTRON TRANSMUTATION DOPED ISOTOPICALLY ENRICHED GE-70 - GA SINGLE-CRYSTALS

被引：6
作者：
ITOH, KM
HANSEN, WL
BEEMAN, JW
HALLER, EE
FARMER, JW
OZHOGIN, VI
机构：
[1] LAWRENCE BERKELEY LAB,BERKELEY,CA 94720
[2] UNIV MISSOURI,COLUMBIA,MO 65211
[3] IV KURCHATOV ATOM ENERGY INST,MOSCOW 123182,RUSSIA
来源：
JOURNAL OF LOW TEMPERATURE PHYSICS | 1993年 / 93卷 / 3-4期
关键词：
D O I：
10.1007/BF00693438
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The temperature dependence of variable range hopping resistivity rho in neutron transmutation doped (NTD) isotopically enriched Ge-70:Ga samples is reported. Five samples with compensation ratios K less than 0.001 and Ga concentrations between 3x10(16) and 1.77x10(17) cm-3 were studied. All samples investigated show the in rho is-proportional-to T-1/2 dependence in the temperature range below 1.5K. As thermistor materials NTD Ge-70:Ga samples are found to have more than factor of two higher sensitivity than commonly used natural NTD Ge in the temperature range between 0.2K and 1K. Our results are compared with theoretical predictions for variable range hopping conduction.
引用
收藏
页码：307 / 312
页数：6
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