APPLICATIONS OF RHEED TO THE STUDY OF GROWTH DYNAMICS AND SURFACE-CHEMISTRY DURING MBE

被引：7

作者：

JOYCE, BA ^{[1
]}

OHTANI, N ^{[1
]}

MOKLER, SM ^{[1
]}

SHITARA, T ^{[1
]}

ZHANG, J ^{[1
]}

NEAVE, JH ^{[1
]}

FAWCETT, PN ^{[1
]}

机构：

[1] NIPPON STEEL CORP LTD,ELECTR RES LABS,ADV SEMICOND TECHNOL LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

SURFACE SCIENCE | 1993年 / 298卷 / 2-3期

关键词：

D O I：

10.1016/0039-6028(93)90054-N

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We discuss three applications of RHEED to the study of semiconductor film growth by MBE. In the first we discuss the extension of the vicinal plane method to the in-situ measurement of step propagation rates and show how they vary with growth parameters. The second concerns some apparent anomalies in the RHEED response to the growth of GaAs on GaAs(110) surfaces. Finally we consider surface chemical processes (reaction and segregation) in the growth of Si and SiGe alloys from molecular beams of Si2H6 and GeH4. We demonstrate that the in-situ measurement of the growth rate on a monolayer-by-monolayer basis can provide quite detailed chemical information.

引用

页码：399 / 407

页数：9

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