ON THE INFLUENCE OF DIFFUSION AND SURFACE RECOMBINATION UPON THE GR NOISE SPECTRUM OF SEMICONDUCTORS

被引：19
作者：
CHAMPLIN, KS
机构：
来源：
PHYSICA | 1960年 / 26卷 / 09期
关键词：
D O I：
10.1016/0031-8914(60)90065-3
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：751 / 760
页数：10
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