ON THE INFLUENCE OF DIFFUSION AND SURFACE RECOMBINATION UPON THE GR NOISE SPECTRUM OF SEMICONDUCTORS

被引：19

作者：

CHAMPLIN, KS

机构：

来源：

PHYSICA | 1960年 / 26卷 / 09期

关键词：

D O I：

10.1016/0031-8914(60)90065-3

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：751 / 760

页数：10

共 11 条

[1] Champlin K. S., 1960, IRE T ELECTRON DEV, V7, P29
[2] GENERATION RECOMBINATION NOISE IN INTRINSIC AND NEAR-INTRINSIC GERMANIUM CRYSTALS
HILL, JE
VANVLIET, KM
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (02) : 177 - 182
[3] HYDE FJ, 1956, C PHYS SOC SEMICONDU, P57
[4] FLUCTUATIONS FROM THE NONEQUILIBRIUM STEADY STATE
LAX, M
[J]. REVIEWS OF MODERN PHYSICS, 1960, 32 (01) : 25 - 64
[5] LAX M, 1959, 2ND C SEM SURF
[6] RAMO S, 1953, FIELDS WAVES MODERN, P41
[7] THE LINEAR THEORY OF FLUCTUATIONS ARISING FROM DIFFUSIONAL MECHANISMS - AN ATTEMPT AT A THEORY OF CONTACT NOISE
RICHARDSON, JM
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1950, 29 (01): : 117 - 141
[8] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS
SHOCKLEY, W
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489
[9] Shockley W., 1950, ELECT HOLES SEMICOND, P318
[10] VANDERZIEL A, 1954, NOISE, P438