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THE SOLUTION OF IRON IN SILICON
被引:100
作者
:
WEBER, E
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLOGNE,INST KERNCHEM,D-5000 COLOGNE 41,FED REP GER
UNIV COLOGNE,INST KERNCHEM,D-5000 COLOGNE 41,FED REP GER
WEBER, E
[
1
]
RIOTTE, HG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLOGNE,INST KERNCHEM,D-5000 COLOGNE 41,FED REP GER
UNIV COLOGNE,INST KERNCHEM,D-5000 COLOGNE 41,FED REP GER
RIOTTE, HG
[
1
]
机构
:
[1]
UNIV COLOGNE,INST KERNCHEM,D-5000 COLOGNE 41,FED REP GER
来源
:
JOURNAL OF APPLIED PHYSICS
|
1980年
/ 51卷
/ 03期
关键词
:
D O I
:
10.1063/1.327795
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1484 / 1488
页数:5
相关论文
共 34 条
[1]
THE SOLID SOLUBILITY OF NICKEL IN SILICON DETERMINED BY NEUTRON ACTIVATION ANALYSIS
[J].
AALBERTS, JH
论文数:
0
引用数:
0
h-index:
0
AALBERTS, JH
;
VERHEIJKE, ML
论文数:
0
引用数:
0
h-index:
0
VERHEIJKE, ML
.
APPLIED PHYSICS LETTERS,
1962,
1
(01)
:19
-20
[2]
QUENCHED-IN LATTICE DEFECTS IN GOLD
[J].
BAUERLE, JE
论文数:
0
引用数:
0
h-index:
0
BAUERLE, JE
;
KOEHLER, JS
论文数:
0
引用数:
0
h-index:
0
KOEHLER, JS
.
PHYSICAL REVIEW,
1957,
107
(06)
:1493
-1498
[3]
BENDIK NT, 1971, SOV PHYS SEMICOND+, V5, P749
[4]
ESR IN IRON DOPED SILICON-CRYSTALS UNDER STRESS
[J].
BERKE, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLOGNE,MET ABT 2,D-5000 COLOGNE,FED REP GER
BERKE, M
;
WEBER, E
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLOGNE,MET ABT 2,D-5000 COLOGNE,FED REP GER
WEBER, E
;
ALEXANDER, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLOGNE,MET ABT 2,D-5000 COLOGNE,FED REP GER
ALEXANDER, H
;
LUFT, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLOGNE,MET ABT 2,D-5000 COLOGNE,FED REP GER
LUFT, H
;
ELSCHNER, B
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLOGNE,MET ABT 2,D-5000 COLOGNE,FED REP GER
ELSCHNER, B
.
SOLID STATE COMMUNICATIONS,
1976,
20
(09)
:881
-884
[5]
DIFFUSION OF NICKEL IN SILICON
[J].
BONZEL, HP
论文数:
0
引用数:
0
h-index:
0
BONZEL, HP
.
PHYSICA STATUS SOLIDI,
1967,
20
(02)
:493
-&
[6]
DOUBLE-ACCEPTOR BEHAVIOR OF ZINC IN SILICON
[J].
CARLSON, RO
论文数:
0
引用数:
0
h-index:
0
CARLSON, RO
.
PHYSICAL REVIEW,
1957,
108
(06)
:1390
-1393
[7]
PROPERTIES OF SILICON DOPED WITH IRON OR COPPER
[J].
COLLINS, CB
论文数:
0
引用数:
0
h-index:
0
COLLINS, CB
;
CARLSON, RO
论文数:
0
引用数:
0
h-index:
0
CARLSON, RO
.
PHYSICAL REVIEW,
1957,
108
(06)
:1409
-1414
[8]
PROPERTIES OF GOLD-DOPED SILICON
[J].
COLLINS, CB
论文数:
0
引用数:
0
h-index:
0
COLLINS, CB
;
CARLSON, RO
论文数:
0
引用数:
0
h-index:
0
CARLSON, RO
;
GALLAGHER, CJ
论文数:
0
引用数:
0
h-index:
0
GALLAGHER, CJ
.
PHYSICAL REVIEW,
1957,
105
(04)
:1168
-1173
[9]
QUENCHED-IN LEVELS IN P-TYPE SILICON
[J].
ELSTNER, L
论文数:
0
引用数:
0
h-index:
0
ELSTNER, L
;
KAMPRATH, W
论文数:
0
引用数:
0
h-index:
0
KAMPRATH, W
.
PHYSICA STATUS SOLIDI,
1967,
22
(02)
:541
-&
[10]
LOCALIZATION OF FEO-LEVEL IN SILICON
[J].
FEICHTINGER, H
论文数:
0
引用数:
0
h-index:
0
FEICHTINGER, H
;
WALTL, J
论文数:
0
引用数:
0
h-index:
0
WALTL, J
;
GSCHWANDTNER, A
论文数:
0
引用数:
0
h-index:
0
GSCHWANDTNER, A
.
SOLID STATE COMMUNICATIONS,
1978,
27
(09)
:867
-871
←
1
2
3
4
→
共 34 条
[1]
THE SOLID SOLUBILITY OF NICKEL IN SILICON DETERMINED BY NEUTRON ACTIVATION ANALYSIS
[J].
AALBERTS, JH
论文数:
0
引用数:
0
h-index:
0
AALBERTS, JH
;
VERHEIJKE, ML
论文数:
0
引用数:
0
h-index:
0
VERHEIJKE, ML
.
APPLIED PHYSICS LETTERS,
1962,
1
(01)
:19
-20
[2]
QUENCHED-IN LATTICE DEFECTS IN GOLD
[J].
BAUERLE, JE
论文数:
0
引用数:
0
h-index:
0
BAUERLE, JE
;
KOEHLER, JS
论文数:
0
引用数:
0
h-index:
0
KOEHLER, JS
.
PHYSICAL REVIEW,
1957,
107
(06)
:1493
-1498
[3]
BENDIK NT, 1971, SOV PHYS SEMICOND+, V5, P749
[4]
ESR IN IRON DOPED SILICON-CRYSTALS UNDER STRESS
[J].
BERKE, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLOGNE,MET ABT 2,D-5000 COLOGNE,FED REP GER
BERKE, M
;
WEBER, E
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLOGNE,MET ABT 2,D-5000 COLOGNE,FED REP GER
WEBER, E
;
ALEXANDER, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLOGNE,MET ABT 2,D-5000 COLOGNE,FED REP GER
ALEXANDER, H
;
LUFT, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLOGNE,MET ABT 2,D-5000 COLOGNE,FED REP GER
LUFT, H
;
ELSCHNER, B
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLOGNE,MET ABT 2,D-5000 COLOGNE,FED REP GER
ELSCHNER, B
.
SOLID STATE COMMUNICATIONS,
1976,
20
(09)
:881
-884
[5]
DIFFUSION OF NICKEL IN SILICON
[J].
BONZEL, HP
论文数:
0
引用数:
0
h-index:
0
BONZEL, HP
.
PHYSICA STATUS SOLIDI,
1967,
20
(02)
:493
-&
[6]
DOUBLE-ACCEPTOR BEHAVIOR OF ZINC IN SILICON
[J].
CARLSON, RO
论文数:
0
引用数:
0
h-index:
0
CARLSON, RO
.
PHYSICAL REVIEW,
1957,
108
(06)
:1390
-1393
[7]
PROPERTIES OF SILICON DOPED WITH IRON OR COPPER
[J].
COLLINS, CB
论文数:
0
引用数:
0
h-index:
0
COLLINS, CB
;
CARLSON, RO
论文数:
0
引用数:
0
h-index:
0
CARLSON, RO
.
PHYSICAL REVIEW,
1957,
108
(06)
:1409
-1414
[8]
PROPERTIES OF GOLD-DOPED SILICON
[J].
COLLINS, CB
论文数:
0
引用数:
0
h-index:
0
COLLINS, CB
;
CARLSON, RO
论文数:
0
引用数:
0
h-index:
0
CARLSON, RO
;
GALLAGHER, CJ
论文数:
0
引用数:
0
h-index:
0
GALLAGHER, CJ
.
PHYSICAL REVIEW,
1957,
105
(04)
:1168
-1173
[9]
QUENCHED-IN LEVELS IN P-TYPE SILICON
[J].
ELSTNER, L
论文数:
0
引用数:
0
h-index:
0
ELSTNER, L
;
KAMPRATH, W
论文数:
0
引用数:
0
h-index:
0
KAMPRATH, W
.
PHYSICA STATUS SOLIDI,
1967,
22
(02)
:541
-&
[10]
LOCALIZATION OF FEO-LEVEL IN SILICON
[J].
FEICHTINGER, H
论文数:
0
引用数:
0
h-index:
0
FEICHTINGER, H
;
WALTL, J
论文数:
0
引用数:
0
h-index:
0
WALTL, J
;
GSCHWANDTNER, A
论文数:
0
引用数:
0
h-index:
0
GSCHWANDTNER, A
.
SOLID STATE COMMUNICATIONS,
1978,
27
(09)
:867
-871
←
1
2
3
4
→