A 34.8 GHZ 1/4 STATIC FREQUENCY-DIVIDER USING ALGAAS GAAS HBTS

被引：0
作者：
YAMAUCHI, Y
NAKAJIMA, O
NAGATA, K
ITO, H
ISHIBASHI, T
机构：
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 1992年 / E75C卷 / 10期
关键词：
HBT; GAASIC; ALGAAS GAAS; FREQUENCY DIVIDER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A one-by-four static frequency divider using AlGaAs/GaAs heterojunction bipolar transistors (HBTs) was designed to operate at a bias condition that gave a maximum cutoff frequency f(T) and a maximum oscillation frequency f(max). The f(T) and f(max) applied to the divider were 68 GHz and 56 GHz, respectively. As a result of the tests, the circuit operated up to 34.8 GHz at a power supply voltage of 9 V and power dissipation of 495 mW. A low minimum input signal power level of 0 dBm was also achieved.
引用
收藏
页码：1105 / 1109
页数：5
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TWYNAM, JK ;
YAGURA, M ;
KISHIMOTO, K ;
KINOSADA, T ;
SATO, H ;
SHIMIZU, M .
SOLID-STATE ELECTRONICS, 1995, 38 (09) :1657-1661
[22]   Design of 120:1 Frequency Divider for a 12.6 GHz Phase-Locked Loop [J].
Duong, H. T. ;
Tran, N. ;
Huynh, A. T. ;
Le, H. V. ;
Skafidas, E. .
2014 1ST AUSTRALIAN MICROWAVE SYMPOSIUM (AMS), 2014, :33-34
[23]   HIGH F-MAX ALGAAS/GAAS HBTS WITH PT/TI/PT/AU BASE CONTACTS FOR DC TO 40 GHZ BROAD-BAND AMPLIFIERS [J].
SUGIYAMA, T ;
KURIYAMA, Y ;
IIZUKA, N ;
TSUDA, K ;
MORIZUKA, K ;
OBARA, M .
IEICE TRANSACTIONS ON ELECTRONICS, 1995, E78C (08) :944-948
[24]   High Speed Static Frequency Divider Design with 111.6 GHz Self-Oscillation Frequency (SOF) in 0.13 μm SiGe BiCMOS Technology [J].
Ali, U. ;
Bober, M. ;
Thiede, A. ;
Awny, A. ;
Fischer, G. .
2015 GERMAN MICROWAVE CONFERENCE, 2015, :241-243
[25]   39.5-GHz 0.2-μm PHEMT 2:1 dynamic frequency divider [J].
Ding Jingfeng ;
Wang Zhigong ;
Qiu Yinghua ;
Zhu En ;
Li Wei .
CHINESE JOURNAL OF ELECTRONICS, 2007, 16 (01) :51-53
[26]   DESIGN of a 18 GHZ DIVIDE-by-4 PRESCALER USING 1μM GaAs HBT TECHNOLOGY [J].
Li, Chengzhi ;
Qu, Xiaofeng ;
Lu, Kejie ;
Sui, Wenquan .
2009 IEEE 9TH MALAYSIA INTERNATIONAL CONFERENCE ON COMMUNICATIONS (MICC), 2009, :354-357
[27]   CARBON-DOPED-BASE ALGAAS GAAS HBTS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY USING ONLY GASEOUS SOURCES [J].
TAKAHASHI, T ;
YAMAGUCHI, Y ;
SANDHU, A ;
ANDO, H ;
FUJII, T ;
YOKOYAMA, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B) :3843-3845
[28]   CMOS Integrated 1 GHz Ring Oscillator with Injection-Locked Frequency Divider for Low Power PLL [J].
Park, Jusang ;
Chun, Seungki ;
Choi, Hoyong ;
Kim, Namsoo .
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[29]   A 1.2V 15.6mW 81 GHz 2:1 static CML frequency divider with a band-pass load in a 90nm SOICMOS technology [J].
Plouchart, Jean-Olivier ;
Kim, Daiek ;
Kim, Jonghae ;
Karam, Victor ;
Plett, Calvin ;
Cho, Choongyeun ;
Trzcinski, Robert .
IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2007 IEEE CSIC SYMPOSIUM, TECHNOLOGY DIGEST, 2007, :117-+
[30]   A 1-V 2.5-mW 5.2-GHz frequency divider in a 0.35-μm CMOS process [J].
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Cheung, VSL ;
Luong, HC .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (10) :1643-1648
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