STUDY OF ZN-ASSOCIATED LEVELS IN GAN

被引：5

作者：

KHAN, MRH ^{[1
]}

SAWAKI, N ^{[1
]}

AKASAKI, I ^{[1
]}

机构：

[1] NAGOYA UNIV,DEPT ELECTR,CHIKUSA KU,NAGOYA,AICHI 464,JAPAN

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 04期

关键词：

D O I：

10.1088/0268-1242/7/4/006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The violet-blue emission band due to the incorporation of Zn in GaN has been studied and has been shown to possess a complex behaviour involving both donor-acceptor (D-A) pair and self-activated (S-A) pair properties. A Zn concentration dependence and temperature dependence of this emission has been shown. An attempt to present and analyse the transition process by a suitable model is reported.

引用

页码：472 / 477

页数：6

共 34 条

[1] STIMULATED-EMISSION NEAR ULTRAVIOLET AT ROOM-TEMPERATURE FROM A GAN FILM GROWN ON SAPPHIRE BY MOVPE USING AN AIN BUFFER LAYER [J].

AMANO, H ;

ASAHI, T ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (02) :L205-L206

[2] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].

AMANO, H ;

KITO, M ;

HIRAMATSU, K ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114

[3] TIME-RESOLVED SPECTROSCOPY OF ZN-DOPED AND CD-DOPED GAN [J].

BERGMAN, P ;

YING, G ;

MONEMAR, B ;

HOLTZ, PO .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (09) :4589-4592

[4] ELECTRONIC STRUCTURE OF CENTERS IN ZNS [J].

BIRMAN, JL .

PHYSICAL REVIEW, 1961, 121 (01) :144-&

[5] BAND STRUCTURES OF GAN AND ALN [J].

BLOOM, S .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (09) :2027-&

[6] CATHODOLUMINESCENCE STUDY OF ZN DOPED GAN [J].

BOULOU, M ;

JACOB, G ;

BOIS, D .

REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (11) :555-563

[7] PHOTOCONDUCTIVITY OF ZN-DOPED GAN [J].

EJDER, E ;

FAGERSTROM, PO .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (04) :289-292

[8] LUMINESZENZEIGENSCHAFTEN UND PHOTOLEITUNGSEIGENSCHAFTEN VON DOTIERTEM GAN [J].

GRIMMEISS, HG ;

GROTH, R ;

MAAK, J .

ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE, 1960, 15 (09) :799-806

[9] EFFECT OF BAND SHAPES ON CARRIER DISTRIBUTION AT HIGH TEMPERATURE [J].

HAYASHI, I .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (04) :113-+

[10] LUMINESCENCE OF ZN-DOPED AND CD-DOPED GAN [J].

ILEGEMS, M ;

LOGAN, RA ;

DINGLE, R .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) :3797-&

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