TEMPERATURE-DEPENDENCE OF THE LOW-FREQUENCY NOISE IN STRUCTURALLY PERFECT GAAS AND AFTER DESTRUCTIVE COMPRESSION

被引：0

作者：

DYAKONOVA, NV

LEVINSHTEIN, ME

RUMYANTSEV, SL

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1991年 / 25卷 / 02期

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D O I：

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：217 / 218

页数：2

共 9 条

[1] BEHAVIOR OF LATTICE DEFECTS IN GAAS [J].

BLANC, J ;

WEISBERG, LR ;

BUBE, RH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) :225-&

[2] GENERATION-RECOMBINATION NOISE IN P-TYPE SILICON [J].

BOSMAN, G ;

ZIJLSTRA, RJJ .

SOLID-STATE ELECTRONICS, 1982, 25 (04) :273-280

[3] SEMICONDUCTOR IMPURITY ANALYSIS FROM LOW-FREQUENCY NOISE SPECTRA [J].

COPELAND, JA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (01) :50-&

[4]

DYAKONOVA NV, 1989, SOV PHYS SEMICOND+, V23, P175

[5] EVALUATION OF THE TRAP CONCENTRATION IN HIGHLY DOPED SEMICONDUCTORS FROM LOW-FREQUENCY NOISE SPECTRA [J].

KUGLER, S .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (01) :219-222

[6]

LEVINSHTEIN ME, 1990, SOV PHYS SEMICOND+, V24, P1125

[7]

LEVINSHTEIN ME, 1991, SOV PHYS SEMICOND+, V25, P97

[8]

MAGARSHACK I, 1972, ACTA ELECTRON, V15, P233

[9] LOW-FREQUENCY NOISE AND DLTS AS SEMICONDUCTOR-DEVICE CHARACTERIZATION TOOLS [J].

SCHOLZ, F ;

HWANG, JM ;

SCHRODER, DK .

SOLID-STATE ELECTRONICS, 1988, 31 (02) :205-217

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