INVESTIGATION OF DEFECTS IN AMORPHOUS-SILICON FILMS USING POSITRON-ANNIHILATION

被引：1

作者：

CHEN, YF ^{[1
]}

WANG, CC ^{[1
]}

TSENG, PK ^{[1
]}

LUE, JT ^{[1
]}

机构：

[1] NATL TSING HUA UNIV,DEPT PHYS,HSINCHU 300,TAIWAN

来源：

关键词：

D O I：

10.1016/0375-9601(89)90692-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：493 / 496

页数：4

共 14 条

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[7] ANNIHILATION OF POSITRONS IN ELECTRON-IRRADIATED SILICON-CRYSTALS
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[8] POSITRON-ANNIHILATION STUDY OF VOIDS IN A-SI AND A-SI-H
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[9] DEFECTS AND MICROVOIDS IN A-SI AND A-SI-H
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ADLER, D
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 74 (01) : 19 - 24
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