OBSERVATION OF INTERFACIAL ATOMIC STEPS DURING SILICON OXIDATION

被引:70
作者
GIBSON, JM
LANZEROTTI, MY
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D O I
10.1038/340128a0
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
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页码:128 / 131
页数:4
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共 23 条
[1]   FORBIDDEN-REFLECTION LATTICE IMAGING FOR THE DETERMINATION OF KINK DENSITIES ON PARTIAL DISLOCATIONS [J].
ALEXANDER, H ;
SPENCE, JCH ;
SHINDO, D ;
GOTTSCHALK, H ;
LONG, N .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1986, 53 (05) :627-643
[2]   SCATTERING OF X-RAYS FROM CRYSTAL-SURFACES [J].
ANDREWS, SR ;
COWLEY, RA .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (35) :6427-6439
[3]   SPECTROSCOPIC ANALYSIS OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE [J].
ASPNES, DE ;
THEETEN, JB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) :1359-1365
[4]   GEOMETRIC AND LOCAL ELECTRONIC-STRUCTURE OF SI(111)-AS [J].
BECKER, RS ;
SWARTZENTRUBER, BS ;
VICKERS, JS ;
HYBERTSEN, MS .
PHYSICAL REVIEW LETTERS, 1988, 60 (02) :116-119
[5]   HIGH-RESOLUTION ELECTRON-MICROSCOPY AND SCANNING TUNNELING MICROSCOPY OF NATIVE OXIDES ON SILICON [J].
CARIM, AH ;
DOVEK, MM ;
QUATE, CF ;
SINCLAIR, R ;
VORST, C .
SCIENCE, 1987, 237 (4815) :630-633
[6]   DIRECT RESOLUTION OF SURFACE ATOMIC STEPS BY TRANSMISSION ELECTRON-MICROSCOPY [J].
CHERNS, D .
PHILOSOPHICAL MAGAZINE, 1974, 30 (03) :549-556
[7]  
GIBSON JM, UNPUB APPL PHYS LETT
[8]   SURFACE-ROUGHNESS AT THE SI(100)-SIO2 INTERFACE [J].
GOODNICK, SM ;
FERRY, DK ;
WILMSEN, CW ;
LILIENTAL, Z ;
FATHY, D ;
KRIVANEK, OL .
PHYSICAL REVIEW B, 1985, 32 (12) :8171-8186
[9]  
GROVENOR CRM, 1986, MRS S, V53, P301
[10]  
GRUNDER M, IN PRESS J VAC SCI T