MAGNETIC-FIELD STUDIES OF NEGATIVE DIFFERENTIAL CONDUCTIVITY IN DOUBLE BARRIER RESONANT TUNNELLING STRUCTURES BASED ON N-INP/(INGA)AS

被引：67

作者：

LEADBEATER, ML ^{[1
]}

EAVES, L ^{[1
]}

SIMMONDS, PE ^{[1
]}

TOOMBS, GA ^{[1
]}

SHEARD, FW ^{[1
]}

CLAXTON, PA ^{[1
]}

HILL, G ^{[1
]}

PATE, MA ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 3-4期

关键词：

This work is supported by SERC;

D O I：

10.1016/0038-1101(88)90372-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：707 / 710

页数：4

共 11 条

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[10] DEPENDENCE OF THE CONDUCTION IN IN0.53GA0.47AS-INP DOUBLE-BARRIER TUNNELING STRUCTURES ON THE MESA-ETCHING PROCESS [J].

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