RESONANT RAMAN-SCATTERING IN INP

被引：23

作者：

SINYUKOV, M ^{[1
]}

TROMMER, R ^{[1
]}

CARDONA, M ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART,FED REP GER

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1978年 / 86卷 / 02期

关键词：

D O I：

10.1002/pssb.2220860216

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Measurements are made of resonant first‐ and second‐order Raman scattering by phonons in InP for photon energies from 1.75 to 3.05 eV. The behaviour of all observed resonances can be well explained by effects due to the E0 + Δ0 and the E1 band gaps. A comparison of the first‐order deformation potential at E1 with the one of GaAs is made and several electron‐two‐phonon deformation potentials are evaluated. Copyright © 1978 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：563 / 568

页数：6

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