DEPOSITION OF ZIRCONIUM BORIDE THIN-FILMS BY DIRECT-CURRENT TRIODE SPUTTERING

[1] ADAMS RM, 1964, BORON METALLOBORON C

[2] THE MIGRATION OF GOLD FROM THE P-CONTACT AS A SOURCE OF DARK SPOT DEFECTS IN INP/INGAASP LEDS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) : 304 - 310

[3] MODIFICATION OF NIOBIUM FILM STRESS BY LOW-ENERGY ION-BOMBARDMENT DURING DEPOSITION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 349 - 354

[4] DAUTREMONTSMITH WC, IN PRESS

[5] ADHESION, INTERNAL-STRESS, MICROSTRUCTURE AND RESISTIVITY OF THIN ALLOY-FILMS OF ALUMINUM, COPPER AND SILVER [J]. THIN SOLID FILMS, 1982, 96 (03) : 257 - 263

[6] MECHANICAL-PROPERTIES OF THIN ALLOY-FILMS - ULTRAMICROHARDNESS AND INTERNAL-STRESS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (12) : 4248 - 4256

[7] Glang LI, 1970, HDB THIN FILM TECHNO, P4

[8] GLANG R, 1970, HDB THIN FILM TECHNO, P2

[9] Hoffmann RW., 1976, PHYS NONMETALLIC THI, P273, DOI [10.1007/978-1-4684-0847-8_12, DOI 10.1007/978-1-4684-0847-8_12]

[10] A WSI/TIN/AU GATE SELF-ALIGNED GAAS-MESFET WITH SELECTIVELY GROWN N+-LAYER USING MOCVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (05): : L342 - L345

[1] ADAMS RM, 1964, BORON METALLOBORON C

[2] THE MIGRATION OF GOLD FROM THE P-CONTACT AS A SOURCE OF DARK SPOT DEFECTS IN INP/INGAASP LEDS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) : 304 - 310

[3] MODIFICATION OF NIOBIUM FILM STRESS BY LOW-ENERGY ION-BOMBARDMENT DURING DEPOSITION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 349 - 354

[4] DAUTREMONTSMITH WC, IN PRESS

[5] ADHESION, INTERNAL-STRESS, MICROSTRUCTURE AND RESISTIVITY OF THIN ALLOY-FILMS OF ALUMINUM, COPPER AND SILVER [J]. THIN SOLID FILMS, 1982, 96 (03) : 257 - 263

[6] MECHANICAL-PROPERTIES OF THIN ALLOY-FILMS - ULTRAMICROHARDNESS AND INTERNAL-STRESS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (12) : 4248 - 4256

[7] Glang LI, 1970, HDB THIN FILM TECHNO, P4

[8] GLANG R, 1970, HDB THIN FILM TECHNO, P2

[9] Hoffmann RW., 1976, PHYS NONMETALLIC THI, P273, DOI [10.1007/978-1-4684-0847-8_12, DOI 10.1007/978-1-4684-0847-8_12]

[10] A WSI/TIN/AU GATE SELF-ALIGNED GAAS-MESFET WITH SELECTIVELY GROWN N+-LAYER USING MOCVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (05): : L342 - L345