EPITAXY OF MONOLAYER SILICON FILMS STUDIED BY OPTICAL 2ND-HARMONIC GENERATION

被引：15

作者：

IYER, SS

HEINZ, TF

LOY, MMT

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 03期

关键词：

D O I：

10.1116/1.583812

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：709 / 709

页数：1

共 9 条

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J].

ABBINK, HC ;

BROUDY, RM ;

MCCARTHY, GP .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4673-&

[2] ACTIVATION-ENERGY FOR MIGRATION ON SILICON (111) FACE [J].

BEDAIR, SM .

SURFACE SCIENCE, 1974, 42 (02) :595-599

[3] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].

CSEPREGI, L ;

KENNEDY, EF ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3906-3911

[4] STUDY OF SI(111) SURFACES BY OPTICAL 2ND-HARMONIC GENERATION - RECONSTRUCTION AND SURFACE PHASE-TRANSFORMATION [J].

HEINZ, TF ;

LOY, MMT ;

THOMPSON, WA .

PHYSICAL REVIEW LETTERS, 1985, 54 (01) :63-66

[5]

HEINZ TF, 1985, J VAC SCI TECHNOL B, V3, P1476

[6]

KASPER E, 1982, APPL PHYS A-MATER, V28, P129, DOI 10.1007/BF00617144

[7] EFFECT OF LATTICE POTENTIAL UPON THE SURFACE-DIFFUSION OF SI ON SI(100) [J].

NOORBATCHA, I ;

RAFF, LM ;

THOMPSON, DL .

JOURNAL OF CHEMICAL PHYSICS, 1985, 83 (11) :6009-6011

[8] TOTAL ENERGY OF THE ADATOM AND PYRAMIDAL-CLUSTER MODELS FOR SI(111) [J].

NORTHRUP, JE ;

COHEN, ML .

PHYSICAL REVIEW B, 1984, 29 (04) :1966-1969

[9] SURFACE STUDIES BY OPTICAL 2ND HARMONIC-GENERATION - AN OVERVIEW [J].

SHEN, YR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05) :1464-1466

← 1 →