OXIDATION OF SILICON WITHOUT FORMATION OF STACKING-FAULTS

被引：24
|
作者：
MURARKA, SP [1 ]
LEVINSTEIN, HJ [1 ]
MARCUS, RB [1 ]
WAGNER, RS [1 ]
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 09期
关键词：
D O I：
10.1063/1.324241
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4001 / 4003
页数：3
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