OXIDATION OF SILICON WITHOUT FORMATION OF STACKING-FAULTS

被引：24

作者：

MURARKA, SP ^{[1
]}

LEVINSTEIN, HJ ^{[1
]}

MARCUS, RB ^{[1
]}

WAGNER, RS ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 09期

关键词：

D O I：

10.1063/1.324241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4001 / 4003

页数：3

共 10 条

[1] Burgess R.R., 1973, SEMICONDUCTOR SILICO, P363
[2] ANOMALOUS TEMPERATURE EFFECT OF OXIDATION STACKING-FAULTS IN SILICON
HU, SM
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (04) : 165 - 167
[3] OXIDATION INDUCED STACKING-FAULTS IN N-TYPE AND P-TYPE (100) SILICON
MURAKA, SP
QUINTANA, G
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) : 46 - 51
[4] STUDY OF PHOSPHORUS GETTERING OF GOLD IN SILICON BY USE OF NEUTRON-ACTIVATION ANALYSIS
MURARKA, SP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) : 765 - 767
[5] ELIMINATION OF PROCESS-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SI WAFERS .2. SI-3 N-4 PROCESS
PETROFF, PM
ROZGONYI, GA
SHENG, TT
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) : 565 - 570
[6] NITROGEN REACTION AT A SILICON-SILICON DIOXIDE INTERFACE
RAIDER, SI
GDULA, RA
PETRAK, JR
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (03) : 150 - 152
[7] ELIMINATION OF OXIDATION-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS .1. PHOSPHORUS DIFFUSION-INDUCED MISFIT DISLOCATIONS
ROZGONYI, GA
PETROFF, PM
READ, MH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1725 - 1729
[8] DISLOCATION ETCH FOR (100) PLANES IN SILICON
SECCODARAGONA, F
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (07) : 948 - +
[9] DIRECT COMPARISON OF ION-DAMAGE GETTERING AND PHOSPHORUS-DIFFUSION GETTERING OF AU IN SI
SEIDEL, TE
MEEK, RL
CULLIS, AG
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) : 600 - 609
[10] ELIMINATION OF STACKING-FAULTS IN SILICON WAFERS BY HCL ADDED DRY O2 OXIDATION
SHIRAKI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (06) : 747 - 752

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