CARRIER AND GAIN SPATIAL PROFILES IN GAAS STRIPE GEOMETRY LASERS

被引：111

作者：

HAKKI, BW ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 11期

关键词：

D O I：

10.1063/1.1662080

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5021 / 5028

页数：8

共 15 条

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ADAMS, MJ .

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[2] OPTIMUM STRIP WIDTH FOR CONTINUOUS OPERATION OF GAAS JUNCTION LASERS [J].

DYMENT, JC ;

RIPPER, JE ;

ZACHOS, TH .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) :1802-+

[3] PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300 K CW OPERATION [J].

DYMENT, JC ;

NORTH, JC ;

MILLER, BI ;

RIPPER, JE ;

DASARO, LA .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (06) :726-&

[4] HERMITE-GAUSSIAN MODE PATTERNS IN GAAS JUNCTION LASERS [J].

DYMENT, JC .

APPLIED PHYSICS LETTERS, 1967, 10 (03) :84-&

[5]

DYMENT JC, UNPUBLISHED

[6] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN [J].

HAKKI, BW ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4113-4119

[7]

HAKKI BW, UNPUBLISHED

[8] JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE [J].

HAYASHI, I ;

PANISH, MB ;

FOY, PW ;

SUMSKI, S .

APPLIED PHYSICS LETTERS, 1970, 17 (03) :109-&

[9] EXCITATION AND DOPING DEPENDENCES OF ELECTRON DIFFUSION LENGTH IN GAAS JUNCTION LASERS [J].

HWANG, CJ .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) :757-+

[10]

JONSCHER AK, 1966 INT S GAAS READ, P78

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