EXTRINSIC-INTRINSIC STACKING-FAULT PAIRS IN EPITAXIAL SILICON

被引：5

作者：

WASHBURN, J

THOMAS, G

QUEISSER, HJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1963年 / 3卷 / 03期

关键词：

D O I：

10.1063/1.1723567

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：44 / 44

页数：1

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[1] THE DETERMINATION OF THE TYPE OF STACKING FAULTS IN FACE CENTERED CUBIC ALLOYS BY MEANS OF CONTRAST EFFECTS IN THE ELECTRON MICROSCOPE
ART, A
GEVERS, R
AMELINCKX, S
[J]. PHYSICA STATUS SOLIDI, 1963, 3 (04): : 697 - 711
[2] STRUCTURE AND ORIGIN OF STACKING FAULTS IN EPITAXIAL SILICON
FINCH, RH
QUEISSER, HJ
WASHBURN, J
THOMAS, G
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 406 - &
[3] ANOMALOUS ELECTRON ABSORPTION EFFECTS IN METAL FOILS - THEORY AND COMPARISON WITH EXPERIMENT
HASHIMOTO, H
HOWIE, A
WHELAN, MJ
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1962, 269 (1336): : 80 - &