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- [2] RECOMBINATION CURRENTS IN VARIABLE-GAP P-N STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (06): : 685 - 686
- [3] VARIABLE-GAP AND BARRIER PHOTO-EMFS DEVELOPED IN A VARIABLE-GAP P-N STRUCTURE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (05): : 549 - 552
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- [5] ELECTROLUMINESCENCE OF VARIABLE-GAP GA1-XALXSB P-N STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (09): : 1038 - 1040
- [6] CURRENT-VOLTAGE AND SPECTRAL CHARACTERISTICS OF VARIABLE-GAP P-N STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (12): : 1361 - 1365
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- [8] PHOTOSENSITIVITY SPECTRA OF VARIABLE-GAP GA1-XALXP P-N STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (01): : 79 - 81
- [9] PHOTO-ELECTRIC PROPERTIES OF P-N STRUCTURES WITH A VARIABLE-GAP FRONT LAYER SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (12): : 1359 - 1360