GE-NITRIDE, GE-OXIDE, AND GE-OXYNITRIDE FORMATION BY ION-IMPLANTATION

被引：9

作者：

STEIN, HJ ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 08期

关键词：

D O I：

10.1149/1.2401979

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1073 / 1076

页数：4

共 20 条

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[2]

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[3]

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[5]

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[6]

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[7] PROPERTIES OF SIXOYNZ FILMS ON SI [J].

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[8]

DEXTER RJ, TO BE PUBLISHED

[9]

Freeman J. H., 1970, European conference on ion implantation, P74

[10] ELECTRICAL AND OPTICAL INVESTIGATIONS OF DONOR FORMATION IN OXYGEN-DOPED GERMANIUM [J].

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