PHOSPHORUS DOPING OF BORON CARBIDES

被引：19

作者：

ASELAGE, TL ^{[1
]}

EMIN, D ^{[1
]}

SAMARA, GA ^{[1
]}

TALLANT, DR ^{[1
]}

VANDEUSEN, SB ^{[1
]}

EATOUGH, MO ^{[1
]}

TARDY, HL ^{[1
]}

VENTURINI, EL ^{[1
]}

JOHNSON, SM ^{[1
]}

机构：

[1] SRI INT,MENLO PK,CA 94025

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.48.11759

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Substitution of an electron donor such as phosphorus for a carbon or boron atom in p-type semiconducting boron carbides is expected to reduce the hole concentration. Phosphorus-doped boron carbide samples have been prepared by hot isostatic pressing with homogeneous dopant levels of up to one phosphorus atom per ten unit cells. Raman spectroscopy and x-ray diffraction confirm the presence of phosphorus within two-atom intericosahedral chains. The high-temperature dc conductivities of doped samples were substantially lower than those of undoped boron carbides. This effect was due to a combination of reduced carrier concentrations and increased hopping activation energies. The low-temperature ac conductivity of doped samples is also smaller than that of undoped samples. However, the number of carriers participating in the ac conduction is a very small fraction (< 0.1%) of the total carrier density.

引用

页码：11759 / 11766

页数：8

共 30 条

[1] STRUCTURE OF BORON-RICH BORON PHOSPHIDE [J].