DEPENDENCE OF STEADY-STATE DEFECT DENSITY IN HYDROGENATED AMORPHOUS-SILICON ON CARRIER GENERATION RATE STUDIED OVER A WIDE-RANGE

Measurements of the steady-state defect density (N(st)) in hydrogenated amorphous silicon under illumination of pulse-laser light, as well as of continuous light, were carried out; and the dependence of N(st) on the effective rate of carrier generation (G) is presented. The values of G ranged from 8 X 10(21) to 2.4 X 10(23) cm-3 s-1, while the illumination temperature was kept at 30 or 105-degrees-C. The results showed trends of N(st) increasing with G similarly to the trends in the literature, but covered a higher and wider G range, and fitted a defect model which assumes a limited number of possible defect states.