COMPARATIVE POTENTIAL PERFORMANCE OF SI, GAAS, GAINAS, INAS SUBMICROMETER-GATE FETS

被引：86
作者：
CAPPY, A
CARNEZ, B
FAUQUEMBERGUES, R
SALMER, G
CONSTANT, E
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 11期
关键词：
D O I：
10.1109/T-ED.1980.20166
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2158 / 2160
页数：3
相关论文
共 12 条
[1]  
CARNEZ B, 1980, J APPL PHYS, V51
[2]   PRESSURE AND COMPOSITION DEPENDENCE OF HIGH-FIELD INSTABILITIES IN IN AS1-XPX ALLOYS [J].
ELSABBAHY, A ;
ADAMS, AR ;
YOUNG, ML .
SOLID-STATE ELECTRONICS, 1978, 21 (01) :83-90
[3]   BIAS DEPENDENCE OF GAAS AND INP MESFET PARAMETERS [J].
ENGELMANN, RWH ;
LIECHTI, CA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) :1288-1296
[4]   HIGH-FIELD TRANSPORT IN GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE [J].
FAWCETT, W ;
HERBERT, DC .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (09) :1641-1654
[5]   VELOCITY-FIELD CHARACTERISTICS OF GA1-XINXP1-YASY QUATERNARY ALLOYS [J].
LITTLEJOHN, MA ;
HAUSER, JR ;
GLISSON, TH .
APPLIED PHYSICS LETTERS, 1977, 30 (05) :242-244
[6]   VELOCITY-FIELD CHARACTERISTICS OF GAAS WITH GAMMA-6(C)-L6(C)-X6(C) CONDUCTION-BAND ORDERING [J].
LITTLEJOHN, MA ;
HAUSER, JR ;
GLISSON, TH .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) :4587-4590
[7]   TRANSIENT AND STEADY-STATE ELECTRON-TRANSPORT PROPERTIES OF GAAS AND INP [J].
MALONEY, TJ ;
FREY, J .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) :781-787
[8]   FREQUENCY LIMITS OF GAAS AND INP FIELD-EFFECT TRANSISTORS [J].
MALONEY, TJ ;
FREY, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (06) :357-358
[9]  
RIDLEY BK, 1977, J APPL PHYS, V48
[10]   ELECTRON DYNAMICS IN SHORT CHANNEL FIELD-EFFECT TRANSISTORS [J].
RUCH, JG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) :652-&
12