COMPARATIVE POTENTIAL PERFORMANCE OF SI, GAAS, GAINAS, INAS SUBMICROMETER-GATE FETS

被引：86

作者：

CAPPY, A

CARNEZ, B

FAUQUEMBERGUES, R

SALMER, G

CONSTANT, E

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 11期

关键词：

D O I：

10.1109/T-ED.1980.20166

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：2158 / 2160

页数：3

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