ELECTROLUMINESCENCE IN OXYGEN CO-DOPED ZNS-TMF3 AND ZNS-TM, LI THIN-FILM DEVICES

被引：17

作者：

SOHN, SH ^{[1
]}

HAMAKAWA, Y ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 18期

关键词：

D O I：

10.1063/1.109429

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of oxygen co-doping in ZnS:TmF3 and ZnS:Tm, Li thin-film electroluminescent devices are reported. Active layers are deposited in oxygen atmosphere at substrate temperatures of 200 and 300-degrees-C. It is found that by oxygen codoping the luminance of ZnS:TmF3 and ZnS:Tm, Li devices increases, and that this phenomenon becomes marked in the films prepared at a higher substrate temperature.

引用

页码：2242 / 2244

页数：3

共 5 条

[1] MORTON DC, 1989, 9TH P INT DISPL RES, P74
[2] ELECTROLUMINESCENCE IN LI-CODOPED ZNS - TMF3 THIN-FILM DEVICES
SOHN, SH
HYUN, DG
YAMADA, A
HAMAKAWA, Y
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (09) : 991 - 993
[3] EFFECTS OF OXYGEN ON ELECTROLUMINESCENT CHARACTERISTICS OF ZNSTBOF AND ZNSTMOF DEVICES
SOHN, SH
HYUN, DG
NOMA, M
HOSOMI, S
HAMAKAWA, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (10) : 4877 - 4883
[4] THIN-FILM ELECTROLUMINESCENT DEVICES USING CAS AND SRS
TANAKA, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) : 958 - 966
[5] CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY OF ELECTROLUMINESCENT THIN-FILMS FABRICATED BY VARIOUS DEPOSITION METHODS
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OPPOLZER, H
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SCHILD, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 63 (01) : 47 - 57

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