DYNAMIC MINORITY-CARRIER STORAGE IN TRAPATT DIODES

被引:3
|
作者
KIEHL, RA
机构
关键词
D O I
10.1016/0038-1101(80)90005-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:217 / 222
页数:6
相关论文
共 50 条
  • [1] Minority-carrier transport in InGaAsSb thermophotovoltaic diodes
    Martinelli, RU
    Garbuzov, DZ
    Lee, H
    Morris, N
    Odubanjo, T
    Taylor, GC
    Connolly, JC
    THERMOPHOTOVOLTAIC GENERATION OF ELECTRICITY, 1997, (401): : 389 - 395
  • [2] RECOVERY OF DAMAGED GAAS DIODES BY MINORITY-CARRIER INJECTION
    YAMADA, K
    NAKANISHI, H
    WADA, K
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (1A) : A104 - A109
  • [3] NEW EXPERIMENTAL-EVIDENCE FOR MINORITY-CARRIER MIS DIODES
    TARR, NG
    PULFREY, DL
    APPLIED PHYSICS LETTERS, 1979, 34 (04) : 295 - 297
  • [4] MINORITY-CARRIER INJECTION IN GE-AG SCHOTTKY DIODES
    MANIFACIER, JC
    FILLARD, JP
    SOLID-STATE ELECTRONICS, 1976, 19 (04) : 289 - 290
  • [5] MINORITY-CARRIER EXCLUSION
    MANIFACIER, JC
    HENISCH, HK
    SOLID-STATE ELECTRONICS, 1979, 22 (03) : 279 - 281
  • [6] DETERMINATION OF MINORITY-CARRIER LIFETIME USING MIS TUNNEL-DIODES
    KAR, S
    APPLIED PHYSICS LETTERS, 1974, 25 (10) : 587 - 589
  • [7] MINORITY-CARRIER INDUCED MODULATION NOISE IN MIS TUNNEL-DIODES
    VIKTOROVITCH, P
    SOLID-STATE ELECTRONICS, 1979, 22 (04) : 379 - 383
  • [8] THE POTENTIAL BARRIER HEIGHT OF MINORITY-CARRIER MIS TUNNEL-DIODES
    SHOUSHA, AHM
    ELKOSHEIRY, MA
    SOLID STATE COMMUNICATIONS, 1980, 35 (01) : 45 - 48
  • [9] METHOD TO DETERMINE MINORITY-CARRIER LIFETIME IN GAAS LIGHT-EMITTING-DIODES
    MULLER, J
    REICHL, H
    BERNT, H
    SOLID-STATE ELECTRONICS, 1979, 22 (03) : 257 - 260
  • [10] GaN-based laser diodes processed by annealing with minority-carrier injection
    Miyachi, M
    Ota, H
    Kimura, Y
    Watanabe, A
    Tanaka, T
    Takahashi, H
    Chikuma, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (11A): : L1237 - L1239