GAINASP-INP STRIPE LASERS WITH ETCHED MIRRORS FABRICATED BY A WET CHEMICAL ETCH

被引：23
作者：
MILLER, BI
IGA, K
机构：
来源：
APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 04期
关键词：
D O I：
10.1063/1.91939
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：339 / 341
页数：3
相关论文
共 11 条
[1]   CONTROL OF SUBSTRATE DEGRADATION IN INP LPE GROWTH WITH PH3 PARTIAL-PRESSURE [J].
CLAWSON, AR ;
LUM, WY ;
MCWILLIAMS, GE .
JOURNAL OF CRYSTAL GROWTH, 1979, 46 (02) :300-303
[2]   GAINASP-INP FACET LASERS WITH CHEMICALLY-ETCHED END MIRRORS [J].
IGA, K ;
KAMBAYASHI, T ;
WAKAO, K ;
SAKAMOTO, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (10) :2035-2034
[3]  
IGA K, UNPUBLISHED
[4]   MONOLITHIC INTEGRATION OF LASER AND AMPLIFIER-DETECTOR BY TWIN-GUIDE STRUCTURE [J].
KISHINO, K ;
SUEMATSU, Y ;
UTAKA, K ;
KAWANISHI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (03) :589-590
[5]   GAAS INTEGRATED OPTICAL CIRCUITS BY WET CHEMICAL ETCHING [J].
MERZ, JL ;
LOGAN, RA ;
SERGENT, AM .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (02) :72-82
[6]  
MIYASHITA T, 1979, TOPICAL M OPTICAL PD, V1
[7]  
NAKAMURA M, 1980, TOPICAL M INTEGRA MD, V1
[8]   CALCULATED SPONTANEOUS EMISSION FACTOR FOR DOUBLE-HETEROSTRUCTURE INJECTION-LASERS WITH GAIN-INDUCED WAVEGUIDING [J].
PETERMANN, K .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (07) :566-570
[9]   MONOLITHIC INTEGRATION OF AN INJECTION-LASER AND A METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR [J].
URY, I ;
MARGALIT, S ;
YUST, M ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1979, 34 (07) :430-431
[10]  
UTAKA K, 1980, TOPICAL M INTEGRA MC, V5
12