Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations

被引：1

作者：

Vlaskina, S., I ^{[1
,2
]}

Mishinova, G. N. ^{[3
]}

Vlaskin, V., I ^{[4
]}

Rodionov, V. E. ^{[2
]}

Svechnikov, G. S. ^{[2
]}

机构：

[1] Yeoju Univ, Yeoju Inst Technol, 338 Sejong Ro, Yeoju Gun 469705, Gyeonggi Do, South Korea

[2] NAS Ukraine, V Lashkaryov Inst Semicond Phys, 41 Prospect Nauky, UA-03028 Kiev, Ukraine

[3] Taras Shevchenko Kyiv Natl Univ, 64 Volodymyrska Str, UA-01033 Kiev, Ukraine

[4] Sensartech, 2540 Lobelia Dr, Oxnard, CA 93036 USA

来源：

SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2016年 / 19卷 / 01期

关键词：

photoluminescence spectra; SiC crystals and thin films; phase transformations; in-grown defects;

D O I：

10.15407/spqeo19.01.062

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Peculiarities of photoluminescence spectra behavior in SiC crystals and thin films with in-grown defects during phase transformations have been studied. On the deep-level(DL)-spectra, as an example, their characteristics and behavior were investigated. It has been shown that all DL spectra have the same logic of construction and demonstrate identical behavior of the thin structure elements.

引用

页码：62 / 66

页数：5

共 2 条

[1] Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films
Vlaskina, S. I.
Mishinova, G. N.
Vlaskin, V. I.
Rodionov, V. E.
Svechnikov, G. S.
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2015, 18 (02) : 209 - 214
[2] A numerical study of the mechanical behavior of silicon carbide due to pressure-induced phase transformations during nanoindentation
Maniayyah, Ravishankar
Bose, Kingshuk
Cherukuri, Harish
NUMIFORM '07: MATERIALS PROCESSING AND DESIGN: MODELING, SIMULATION AND APPLICATIONS, PTS I AND II, 2007, 908 : 1167 - +

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