PHOTOLUMINESCENCE OF WIDE BANDGAP II-VI SUPERLATTICES

被引：37
作者：
ODONNELL, KP
PARBROOK, PJ
HENDERSON, B
TRAGERCOWAN, C
CHEN, X
YANG, F
HALSALL, MP
WRIGHT, PJ
COCKAYNE, B
机构：
[1] UNIV HULL,HULL HU6 7RX,N HUMBERSIDE,ENGLAND
[2] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
来源：
JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期
关键词：
14;
D O I：
10.1016/0022-0248(90)91036-P
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Photoluminescence (PL) and PL decay measurements are used to characterize typical samples of wide gap II-VI strained layer superlattices (SLSs). The results show that good quality material is obtained for SLSs of ZnSe/ZnS, CdSe/CdS (hex), ZnSe/CdSe and ZnS/CdS using atmospheric pressure MOCVD. Quantum confinement in SLSs is confirmed by the peak shift, temperature dependence and decay characteristics of the exciton luminescence. The PL intensity at low temperatures ( <20 K) shows a weak bistable dependence at low excitation power density in several samples. Transition from excitonic to free-particle behaviour is clear at elevated temperatures. The decay curves are non-exponential, indicating the influence of inhomogeneities and/or impurities. However, lifetimes are uniformly longer than in comparable epilayers. In principle, our results allow us to construct a general band offset diagram for the Zn(Cd)S(Se) family of superlattices. © 1989.
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页码：554 / 558
页数：5
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