INGAAS/INALAS SCH-MQW LASERS WITH SUPERLATTICE OPTICAL CONFINEMENT LAYERS GROWN BY MBE

被引：14
作者：
KAWAMURA, Y
ASAI, H
SAKAI, Y
KOTAKA, I
NAGANUMA, M
机构：
[1] NTT Opto-Electronics Laboratories, Morinosato Wakamiya 3-1
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 01期
关键词：
D O I：
10.1109/68.47022
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InGaAs/InAIAs separate confinement heterostructure multiple qnantum well (SCH-MQW) lasers with snperlattice optical confinement layers are grown by molecular beam epitaxy. Room temperature operation with low threshold current density of 1.7 kA/cm2 at 1.537 µm wavelength is obtained for these lasers. © 1990 IEEE
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页码：1 / 2
页数：2
相关论文
共 10 条
[1]   VERY LOW THRESHOLD CURRENT-DENSITY SCH-MQW LASER-DIODES EMITTING AT 1.55-MU-M [J].
GLEW, RW ;
GARRETT, B ;
GREENE, PD .
ELECTRONICS LETTERS, 1989, 25 (16) :1103-1104
[2]   IMPACT IONIZATION RATES IN AN INGAAS/INALAS SUPERLATTICE [J].
KAGAWA, T ;
KAWAMURA, Y ;
ASAI, H ;
NAGANUMA, M ;
MIKAMI, O .
APPLIED PHYSICS LETTERS, 1989, 55 (10) :993-995
[3]   INGAAS/INGAALAS/INALAS/INP SCH-MQW LASER-DIODES GROWN BY MOLECULAR-BEAM EPITAXY [J].
KAWAMURA, Y ;
ASAHI, H ;
WAKITA, K .
ELECTRONICS LETTERS, 1984, 20 (11) :459-460
[4]   LOW THRESHOLD CURRENT GALNAS/ALLNAS RIDGE MQW LASERS WITH INP CLADDING LAYERS [J].
KAWAMURA, Y ;
NONAKA, K ;
MIKAMI, O .
ELECTRONICS LETTERS, 1988, 24 (10) :637-638
[5]  
KOCH TB, 1989, ELECTRON LETT, V25, P516
[6]  
Kotaka I., 1989, IEEE Photonics Technology Letters, V1, P100, DOI 10.1109/68.34753
[7]   ROOM-TEMPERATURE CW OPERATION OF MBE-GROWN GAINAS/ALINAS MQW LASERS IN 1.5 MU-M RANGE [J].
MATSUSHIMA, Y ;
UTAKA, K ;
SAKAI, K ;
TAKEUCHI, O .
ELECTRONICS LETTERS, 1987, 23 (24) :1271-1273
[8]   SUPERLATTICE OPTICAL-CAVITY MULTIPLE-QUANTUM-WELL (SOC-MQW) LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
SAKAKI, H ;
YOSHINO, J ;
SEKIGUCHI, Y ;
SAKAI, K .
ELECTRONICS LETTERS, 1984, 20 (08) :320-322
[9]   1.5-1.6-MU-M GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
TEMKIN, H ;
ALAVI, K ;
WAGNER, WR ;
PEARSALL, TP ;
CHO, AY .
APPLIED PHYSICS LETTERS, 1983, 42 (10) :845-847
[10]   FABRICATION AND CHARACTERIZATION OF LONG-WAVELENGTH, GAINAS/ALGAINAS/INP MODIFIED-MQW LASERS [J].
WILLIAMS, PJ ;
ROBBINS, DJ ;
REID, TJ ;
DAVIES, JI ;
MARSHALL, AC ;
CARTER, AC .
ELECTRONICS LETTERS, 1989, 25 (01) :5-6
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