IMPLANTED BORON PROFILES IN SILICON

被引：18

作者：

BEHAR, M

WEISER, M

KALBITZER, S

FINK, D

GRANDE, FL

机构：

[1] HAHN MEITNER INST KERNFORSCH BERLIN GMBH,D-1000 BERLIN 39,FED REP GER

[2] UNIV FED RIO GRANDE SUL,INST FIS,BR-90049 PORTO ALEGRE,RS,BRAZIL

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1988年 / 34卷 / 03期

关键词：

D O I：

10.1016/0168-583X(88)90051-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：316 / 320

页数：5

共 18 条

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[2]

[Anonymous], 1977, STOPPING RANGES IONS

[3]

Biersack J.P., 1982, ION IMPLANTATION TEC

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BIERSACK, JP .

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[5] EFFECTIVE STOPPING-POWER CHARGES OF SWIFT IONS IN CONDENSED MATTER [J].

BRANDT, W ;

KITAGAWA, M .

PHYSICAL REVIEW B, 1982, 25 (09) :5631-5637

[6]

FAHRNER W, 1985, COMMUNICATION

[7] RANGE PROFILES OF 10 TO 390 KEV IONS (29-LESS-THAN-OR-EQUAL-TO-Z1-LESS-THAN-OR-EQUAL-TO-83) IMPLANTED INTO AMORPHOUS-SILICON [J].

FICHTNER, PFP ;

BEHAR, M ;

OLIVIERI, CA ;

LIVI, RP ;

DESOUZA, JP ;

ZAWISLAK, FC ;

BIERSACK, JP ;

FINK, D .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 28 (04) :481-487

[8]

GRANDE P, IN PRESS NUCL INST B

[9]

HOFKE WK, 1965, RADIAT EFF, V24, P227

[10] RANGE DISTRIBUTIONS OF MEV IMPLANTS IN SILICON [J].

INGRAM, DC ;

BAKER, JA ;

WALSH, DA .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :361-365

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