GROWTH AND CHARACTERIZATION OF GAXIN1-XSB SOLID SOLUTIONS USING TEMPERATURE-GRADIENT ZONE MELTING

被引:9
作者
HAMAKER, RW
WHITE, WB
机构
关键词
D O I
10.1149/1.2411911
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:478 / &
相关论文
共 27 条
[1]   A NEW METHOD OF GAP GROWTH [J].
BRODER, JD ;
WOLFF, GA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (11) :1150-1153
[2]  
FAUST JW, 1962, COMPOUND SEMICONDUCT, pCH50
[3]   GROWTH OF ALPHA-SIC SINGLE CRYSTALS FROM CHROMIUM SOLUTION [J].
GRIFFITHS, LB ;
MLAVSKY, AI .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) :805-810
[4]   MECHANISM OF SINGLE-CRYSTAL GROWTH IN INSB USING TEMPERATURE-GRADIENT ZONE MELTING [J].
HAMAKER, RW ;
WHITE, WB .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) :1758-&
[5]  
IVANOVOMSKII VI, 1959, SOV PHYS-SOL STATE, V1, P834
[6]   KINETICS OF SOLIDIFICATION [J].
JACKSON, KA ;
CHALMERS, B .
CANADIAN JOURNAL OF PHYSICS, 1956, 34 (05) :473-490
[7]   LATERAL TRAVELING SOLVENT GROWTH IN INDIUM ARSENIDE [J].
KLEINKNE.HP .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) :2116-&
[8]  
KNIPPENBERG WF, 1966, PHILIPS RES REP, V21, P113
[9]  
MASING G, 1944, TERNARY SYSTEMS INTR, P60
[10]   CRYSTAL GROWTH OF GAAS FROM GA BY A TRAVELING SOLVENT METHOD [J].
MLAVSKY, AI ;
WEINSTEIN, M .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) :2885-&