PROPERTIES OF ION-BEAM SYNTHESIZED BURIED SILICON-NITRIDE LAYERS WITH RECTANGULAR NITROGEN PROFILES

被引：33
|
作者：
SKORUPA, W [1 ]
WOLLSCHLAGER, K [1 ]
KREISSIG, U [1 ]
GROTZSCHEL, R [1 ]
BARTSCH, H [1 ]
机构：
[1] INST SOLID STATE PHYS & ELECTRON MICROSCOPY, DDR-4010 HALLE, GER DEM REP
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 19-20卷
关键词：
D O I：
10.1016/S0168-583X(87)80058-7
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：285 / 289
页数：5
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