MONTE-CARLO SIMULATION OF CHANNELED AND RANDOM PROFILES OF HEAVY-IONS IMPLANTED IN SILICON AT HIGH-ENERGY (1.2 MEV)

被引：1

作者：

MAZZONE, AM

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 102卷 / 01期

关键词：

D O I：

10.1002/pssa.2211020150

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K13 / K18

页数：6

共 10 条

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