OHMIC CONTACTS TO SEMICONDUCTING CERAMICS

被引：33

作者：

TURNER, DR

SAUER, HA

机构：

来源：

关键词：

D O I：

10.1149/1.2427662

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：250 / 251

页数：2

共 8 条

[1]

Abner B., 1950, United States patent US, Patent No. [2,532,283, 2532283]

[2]

Brenner A., 1950, U. S. Patent, Patent No. 2532284

[3] NEW LOW CONTACT RESISTANCE ELECTRODE [J].

FLASCHEN, SS ;

VANUITERT, LG .

[4]

PEARLSTEIN F, 1955, MET FINISH, V53, P59

[5]

SAUER HA, 1956, 1956 P INT EL COMP S, P41

[6]

SAUER HA, UNPUB B AM CERAM SOC

[7] HIGH-FREQUENCY GALLIUM ARSENIDE POINT-CONTACT RECTIFIERS [J].

SHARPLESS, WM .

BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (01) :259-269

[8] ELECTROLESS NICKEL PLATING FOR MAKING OHMIC CONTACTS TO SILICON [J].

SULLIVAN, MV ;

EIGLER, JH .