TEMPERATURE-DEPENDENCE OF THE GROWTH ORIENTATION OF ATOMIC LAYER GROWTH MGO

被引：80

作者：

HUANG, R ^{[1
]}

KITAI, AH ^{[1
]}

机构：

[1] MCMASTER UNIV,DEPT ENGN PHYS & MAT SCI & ENGN,HAMILTON L8S 4M1,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 12期

关键词：

D O I：

10.1063/1.107514

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality MgO thin films deposited on Si (111) substrates by atomic layer growth (ALG) are formed by a hydrolysis surface reaction of Mg(C2H5)2 and H2O. The growth orientation of MgO changes from (111) to (100), when the temperature of the silicon substrate changes from 600 to 900-degrees-C. The growth orientation difference of MgO grown by ALG is rationalized in terms of the surface diffusion coefficients on MgO.

引用

页码：1450 / 1452

页数：3

共 22 条

[1] IR AND HIGH-ENERGY ELECTRON-DIFFRACTION ANALYSES OF ELECTRON-BEAM-EVAPORATED MGO FILMS [J].

ABOELFOTOH, MO ;

PARK, KC ;

PLISKIN, WA .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) :2910-2917

[2]

ABOELFOTOH MO, 1975, J VAC SCI TECHNOL, V12, P67, DOI 10.1116/1.568622

[3] Y1BA2CU3O7-X THIN-FILMS GROWN ON SAPPHIRE WITH EPITAXIAL MGO BUFFER LAYERS [J].

BEREZIN, AB ;

YUAN, CW ;

DELOZANNE, AL .

APPLIED PHYSICS LETTERS, 1990, 57 (01) :90-92

[4]

COLBOURN EA, 1984, ADV CERAM, V10, P190

[5] DEPOSITION OF (100) ORIENTED MGO THIN-FILMS ON SAPPHIRE BY A SPRAY PYROLYSIS METHOD [J].

DESISTO, WJ ;

HENRY, RL .

APPLIED PHYSICS LETTERS, 1990, 56 (25) :2522-2523

[6]

Dixit KR, 1933, PHILOS MAG, V16, P1049

[7] GROWTH STRUCTURES OF MGO FILMS ON SI(100) AND SI(111) SURFACES [J].

DURUSOY, HZ .

JOURNAL OF MATERIALS SCIENCE LETTERS, 1991, 10 (17) :1023-1025

[8] CRYSTAL GROWTH AND ORIENTATION IN DEPOSITS CONDENSED FROM THE VAPOUR [J].

EVANS, DM ;

WILMAN, H .

ACTA CRYSTALLOGRAPHICA, 1952, 5 (06) :731-+

[9]

FORK DK, 1991, APPL PHYS LETT, V58, P2295

[10] Surface-Diffusion Studies on UO(2) and MgO [J].

Henney, J. ;

Jones, J. W. S. .

JOURNAL OF MATERIALS SCIENCE, 1968, 3 (02) :158-164

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