HIGH-FIELD ELECTRON-TRANSPORT IN SIGE ALLOY

被引：18
作者：
ERSHOV, M
RYZHII, V
机构：
[1] Department of Computer Hardware, University of Aizu, Aizu-Wakamatsu
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 3A期
关键词：
SIGE ALLOY; ALLOY SCATTERING; ELECTRON TRANSPORT; HOT ELECTRONS; MONTE-CARLO TECHNIQUE; SATURATION VELOCITY; IMPACT IONIZATION;
D O I：
10.1143/JJAP.33.1365
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electron transport in unstrained Si1-xGex (0 less-than-or-equal-to x less-than-or-equal-to 0.4) alloy is studied in the present work using the Monte Carlo (MC) simulation technique. Electron transport characteristics (drift velocity, impact ionization (II) coefficient, etc.) are evaluated over a wide range of electric fields. It is found that not only low-field mobility but also saturation velocity and impact ionization coefficients are reduced with increasing Ge fraction due to alloy scattering. More importantly, the high-energy (epsilon > 2 eV) electron population is reduced to a much greater extent than the ionization coefficient. Simple analytical expressions for electron low-field mobility, saturation velocity and II coefficient which can be easily implemented in device simulation programs are proposed.
引用
收藏
页码：1365 / 1371
页数：7
相关论文
共 45 条
[11]  
ERSHOV M, 1993, 1993 P INT WORKSH VL, P110
[12]   MODELING OF HIGH-ENERGY ELECTRONS IN MOS DEVICES AT THE MICROSCOPIC LEVEL [J].
FIEGNA, C ;
SANGIORGI, E .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (03) :619-627
[13]   MONTE-CARLO ANALYSIS OF ELECTRON-TRANSPORT IN SMALL SEMICONDUCTOR-DEVICES INCLUDING BAND-STRUCTURE AND SPACE-CHARGE EFFECTS [J].
FISCHETTI, MV ;
LAUX, SE .
PHYSICAL REVIEW B, 1988, 38 (14) :9721-9745
[14]   MOBILITY OF ELECTRONS IN GERMANIUM-SILICON ALLOYS [J].
GLICKSMAN, M .
PHYSICAL REVIEW, 1958, 111 (01) :125-128
[15]   ELECTRON AND HOLE IONIZATION RATES IN EPITAXIAL SILICON AT HIGH ELECTRIC-FIELDS [J].
GRANT, WN .
SOLID-STATE ELECTRONICS, 1973, 16 (10) :1189-1203
[16]   THEORETICAL CALCULATIONS OF ELECTRON-MOBILITY IN TERNARY 3-5 COMPOUNDS [J].
HARRISON, JW ;
HAUSER, JR .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (01) :292-300
[17]   METAL-OXIDE-SEMICONDUCTOR STRUCTURES ON GERMANIUM BORON DOPED SILICON [J].
HASHEMIPOUR, O ;
ANG, SS ;
BROWN, WD ;
YEARGAN, JR .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (09) :4647-4651
[18]  
HASHEMIPOUR O, 1991, J APPL PHYS, P1517
[19]   COUPLED MONTE CARLO-DRIFT DIFFUSION ANALYSIS OF HOT-ELECTRON EFFECTS IN MOSFETS [J].
HIGMAN, JM ;
HESS, K ;
HWANG, CG ;
DUTTON, RW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (05) :930-937
[20]   CHARGED CARRIER TRANSPORT IN SI1-XGEX PSEUDOMORPHIC ALLOYS MATCHED TO SI STRAIN-RELATED TRANSPORT IMPROVEMENTS [J].
HINCKLEY, JM ;
SANKARAN, V ;
SINGH, J .
APPLIED PHYSICS LETTERS, 1989, 55 (19) :2008-2010
12345