ANNEALING AND CRYSTALLIZATION PROCESSES IN A HYDROGENATED AMORPHOUS SI-C ALLOY FILM

被引：160

作者：

BASA, DK ^{[1
]}

SMITH, FW ^{[1
]}

机构：

[1] CUNY CITY COLL,DEPT PHYS,NEW YORK,NY 10031

来源：

THIN SOLID FILMS | 1990年 / 192卷 / 01期

关键词：

Silicon and Alloys;

D O I：

10.1016/0040-6090(90)90483-T

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A hydrogenated amorphous SiC alloy film (a-Si1-xCx:H with x = 0.29) was prepared by glow discharge decomposition of a silane and ethylene gas mixture. A careful and detailed investigation of the IR absorption was undertaken in the range from 400 to 4000 cm-1 for both the as-deposited (Ts = 250°C) and annealed (up to 1200°C) film. In addition to the changes in the local bonding brought about by annealing, the study demonstrates clearly that there is a structural change from amorphous to microcrystalline at Ta = 800°C and then to a crystalline phase at Ta = 1200°C. © 1990.

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页码：121 / 133

页数：13

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