RECONSTRUCTING STATES AT THE SI-SIO2 INTERFACE

被引：11

作者：

WHITE, CT

NGAI, KL

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期

关键词：

D O I：

10.1116/1.570212

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1412 / 1417

页数：6

共 31 条

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[8]

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[9] FORMATION OF SURFACE STATES DURING STRESS AGING OF THERMAL SI-SIO2 INTERFACES [J].

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