FEMTOSECOND ABSORPTION SATURATION STUDIES OF HOT CARRIERS IN GAAS AND ALGAAS

被引:150
|
作者
LIN, WZ
SCHOENLEIN, RW
FUJIMOTO, JG
IPPEN, EP
机构
[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
[2] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139
关键词
Manuscript received August 5; 1987; revised September 10; 1987. This work was supported in pan by the U.S. Air Force Office of Scientific Research under Grant 85-02 13 and by the National Science Foundation Presidential Young Investigator Program under Grant ECS-8552701. The work of J. G. Fujimoto was supported by the Spectra Physics Corporation. the Newport Corporation; and the Coming Corporation;
D O I
10.1109/3.123
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
34
引用
收藏
页码:267 / 275
页数:9
相关论文
共 50 条
  • [41] Light absorption and refraction due to intersubband transitions of hot electrons in coupled GaAs/AlGaAs quantum wells
    Vorob'ev, LE
    Titkov, IE
    Firsov, DA
    Shalygin, VA
    Toropov, AA
    Shubina, TV
    Tulupenko, VN
    Towe, E
    SEMICONDUCTORS, 1998, 32 (07) : 757 - 761
  • [42] Hot electron drift velocity in AlGaAs/ GaAs heterojunctions
    Lasserre, Jean
    Tanimoto, Hiroyoshi
    Taniguchi, Kenji
    Hamaguchi, Chihiro
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 pt 1 (06): : 924 - 928
  • [43] HOT-ELECTRON NOISE AND DIFFUSION IN ALGAAS/GAAS
    ANINKEVICIUS, V
    BAREIKIS, V
    KATILIUS, R
    KOPEV, PS
    LEYS, MR
    LIBERIS, J
    MATULIONIS, A
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (05) : 576 - 579
  • [44] Femtosecond photon echo and four-wave mixing studies on GaAs/AlGaAs heterostructure at room temperature
    Ivanin, K. V.
    Leontyev, A. V.
    Lobkov, V. S.
    Samartsev, V. V.
    LASER PHYSICS LETTERS, 2010, 7 (08) : 583 - 586
  • [45] NONEQUILIBRIUM TRANSPORT OF HOT-ELECTRONS IN ALGAAS GAAS
    HAMAGUCHI, C
    KOBAYASHI, E
    SONODA, K
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (05) : 796 - 799
  • [46] HOT-ELECTRON ELECTROLUMINESCENCE IN ALGAAS/GAAS HETEROSTRUCTURES
    PETERSEN, CL
    FREI, MR
    LYON, SA
    SOLID-STATE ELECTRONICS, 1989, 32 (12) : 1919 - 1923
  • [47] Failures of AlGaAs/GaAs HEMTs induced by hot electrons
    Tedesco, C.
    Canali, C.
    Magistrali, F.
    Paccagnella, A.
    Zanoni, E.
    Quality and Reliability Engineering International, 1993, 9 (04) : 371 - 376
  • [48] Hot-electron noise and diffusion in AlGaAs/GaAs
    Aninkevicius, V.
    Bareikis, V.
    Katilius, R.
    Kop'ev, P.S.
    Leys, M.R.
    Liberis, J.
    Matulionis, A.
    Semiconductor Science and Technology, 1994, 9 (5 SUPPL) : 576 - 579
  • [49] NONEQUILIBRIUM DYNAMICS OF HOT CARRIERS AND HOT PHONONS IN CDSE AND GAAS
    PRABHU, SS
    VENGURLEKAR, AS
    ROY, SK
    SHAH, J
    PHYSICAL REVIEW B, 1995, 51 (20): : 14233 - 14246
  • [50] Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires
    Guimaraes, F. E. G.
    Caface, R. A.
    Arakaki, H.
    de Souza, C. A.
    Pusep, Yu. A.
    APPLIED PHYSICS LETTERS, 2013, 103 (03)