FEMTOSECOND ABSORPTION SATURATION STUDIES OF HOT CARRIERS IN GAAS AND ALGAAS

被引：152
作者：
LIN, WZ
SCHOENLEIN, RW
FUJIMOTO, JG
IPPEN, EP
机构：
[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
[2] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 02期
关键词：
Manuscript received August 5; 1987; revised September 10; 1987. This work was supported in pan by the U.S. Air Force Office of Scientific Research under Grant 85-02 13 and by the National Science Foundation Presidential Young Investigator Program under Grant ECS-8552701. The work of J. G. Fujimoto was supported by the Spectra Physics Corporation. the Newport Corporation; and the Coming Corporation;
D O I：
10.1109/3.123
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
34
引用
收藏
页码：267 / 275
页数：9
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