EFFECT OF GAAS/ALGAAS QUANTUM-WELL STRUCTURE ON REFRACTIVE-INDEX

被引：10

作者：

LIN, CH

MEESE, JM

WROGE, ML

WENG, CJ

机构：

[1] Department of Electrical and Computer Engineering, University of Missouri-Columbia, Columbia

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 05期

关键词：

D O I：

10.1109/68.285560

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the refractive index difference between the GaAs/AlGaAs quantum wells (QWs) and bulk AlGaAs. We find the refractive index difference is smaller when the electric field in the nominally intrinsic MQW region is larger, or when the well (GaAs) thickness of the QWs is larger, or when the Al fraction of the QWs is smaller. The maximum refractive index difference between the 100 angstrom GaAs/100 angstrom Al0.2Ga0.8As QWs at zero electric filed and bulk Al0.1Ga0.9As is about 0.044. Even with a small refractive index difference of 0.0132, the OFF-state reflectance of a normally-off MQW modulator at the designed photon wavelength will increase from the desired value of 0% to 90% when the reflectivity of the bottom mirror is 0.99.

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页码：623 / 625

页数：3

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