RECENT DEVELOPMENTS IN OHMIC CONTACTS FOR III-V COMPOUND SEMICONDUCTORS

被引：164
|
作者：
SHEN, TC [1 ]
GAO, GB [1 ]
MORKOC, H [1 ]
机构：
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 05期
关键词：
D O I：
10.1116/1.586179
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Recent advances in the technology and understanding of ohmic contacts for a variety of III-V compound semiconductor material systems are reviewed. Special attention is focused on factors and critical issues involved in making low resistance and reliable ohmic contacts. The solid-phase regrowth mechanisms of key metallization systems are described. In addition, special techniques to improve the ohmic contacts are discussed. Finally, the reliability issues of ohmic contacts are addressed.
引用
收藏
页码：2113 / 2132
页数：20
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