SELECTIVE AREA GROWTH OF III-V-COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY

被引：12

作者：

DAVIES, GJ ^{[1
]}

SKEVINGTON, PJ ^{[1
]}

FRENCH, CL ^{[1
]}

FOORD, JS ^{[1
]}

机构：

[1] UNIV OXFORD,PHYS CHEM LAB,OXFORD OX1 3QZ,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 120卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90420-N

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The reactions of triethylgallium (TEG) on a silicon nitride surface have been investigated to determine the underlying causes for selective area epitaxy. Using the techniques of X-ray photo electron spectroscopy and temperature programmed desorption, TEG is found to weakly adsorb on defect sites at room temperature. Desorption is favoured over further decomposition at higher substrate temperatures. The results are compared with the interaction of TEG on GaAs(100) surface and the implications for the influence of surface arsenic on selective area growth are discussed.

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页码：369 / 375

页数：7

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