INGAP/GAAS SINGLE-HETEROJUNCTION AND DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：14
作者：
HOBSON, WS
REN, F
LOTHIAN, J
PEARTON, SJ
机构：
[1] At and T Bell Labs., Murray Hill, NJ
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 04期
关键词：
D O I：
10.1088/0268-1242/7/4/027
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InGaP/GaAs single-heterojunction bipolar transistors (HBTs) and double-heterojunction bipolar transistors (DHBTs) grown by organometallic vapour phase epitaxy are reported. A current gain beta = 40 was obtained for 90-mu-m diameter HBT devices at a base-collector bias of 0 V The base carbon-doping concentration for the devices was 2 x 10(19) cm-3 and the sheet resistivity (rho(s)) of the base layer was 600 OMEGA/square. For the DHBTs, a current gain beta = 27 was obtained for a base-collector bias of 2 V The carbon doping concentration in these devices was 8 x 10(18) cm-3 with rho(s) = 1400 OMEGA/square. This represents the first successful fabrication Of DHBTs for this material system.
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页码：598 / 600
页数：3
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