TEMPERATURE DEPENDENCE OF BREAKDOWN VOLTAGE IN SILICON ABRUPT P-N JUNCTIONS

被引：24
作者：
CHANG, CY
CHIU, SS
HSU, LP
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1971年 / ED18卷 / 06期
关键词：
D O I：
10.1109/T-ED.1971.17210
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：391 / &
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