POSITION-SENSITIVE LIGHT DETECTORS WITH HIGH LINEARITY

被引：29

作者：

PETERSSON, GP

LINDHOLM, LE

机构：

来源：

关键词：

D O I：

10.1109/JSSC.1978.1051063

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：392 / 399

页数：8

共 16 条

[1]

ALLEN DA, 1960, IRE T I, V9, P336

[2]

ALLEN DA, 1962, IRE T ELECTRON DEV, VED9, P411

[3]

DISTEFANO TH, 1975, 4 ARPA NBS WORKSH SU, P197

[4] LATERAL PHOTOEFFECT [J].

EMMONS, RB .

[5]

EREMIN VK, 1975, SOV PHYS SEMICOND+, V9, P347

[6]

EREMIN VK, 1975, SOV PHYS SEMICOND+, V9, P1038

[7] MICROINHOMOGENEITY PROBLEMS IN SILICON [J].

JOHN, HF ;

FAUST, JW ;

STICKLER, R .

IEEE TRANSACTIONS ON PARTS MATERIALS AND PACKAGING, 1966, PMP2 (03) :51-&

[8]

LABAW KB, 1970, NWCIDP3161 NAV WEAP

[9] ONE AND 2 DIMENSIONAL POSITION SENSING SEMICONDUCTOR DETECTORS [J].

OWEN, RB ;

AWCOCK, ML .

[10]

Schottky W, 1930, PHYS Z, V31, P913