Influence of interface point defect on the dielectric properties of Y doped CaCu3Ti4O12 ceramics

被引：69

作者：

Deng, Jianming ^{[1
,2
]}

Sun, Xiaojun ^{[1
,2
]}

Liu, Saisai ^{[1
,2
]}

Liu, Laijun ^{[1
]}

Yan, Tianxiang ^{[1
,2
]}

Fang, Liang ^{[1
,2
]}

Elouadi, Brahim ^{[3
]}

机构：

[1] Guilin Univ Technol, Minist Educ, Key Lab Nonferrous Mat & New Proc Technol, Guilin 541004, Peoples R China

[2] Guilin Univ Technol, Guangxi Univ Key Lab Nonferrous Met Oxide Elect F, Coll Mat Sci & Engn, Guilin 541004, Peoples R China

[3] Univ La Rochelle, Lab Chem Anal Elaborat & Mat Engn LEACIM, Ave Michel Crepeau, F-17042 La Rochelle 01, France

来源：

JOURNAL OF ADVANCED DIELECTRICS | 2016年 / 6卷 / 01期

关键词：

CaCu3Ti4O12; grain boundary; bulk conduction; electrochemical techniques; dispersion; dielectric properties;

D O I：

10.1142/S2010135X16500090

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CaCu3Ti4-xYxO12 (0 <= x <= 0.12) ceramics were fabricated with conventional solid-state reaction method. Phase structure and microstructure of prepared ceramics were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The impedance and modulus tests both suggested the existence of two different relaxation behavior, which were attributed to bulk and grain boundary response. In addition, the conductivity and dielectric permittivity showed a step-like behavior under 405 K. Meanwhile, frequency independence of dc conduction became dominant when above 405 K. In CCTO ceramic, rare earth element Y3+ ions as an acceptor were used to substitute Ti sites, decreasing the concentration of oxygen vacancy around grain-electrode and grain boundary. The reason to the reduction of dielectric behavior in low frequencies range was associated with the Y doping in CCTO ceramic.

引用

页数：9

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