A PHYSICAL MODEL FOR THE DEPENDENCE OF CARRIER LIFETIME ON DOPING DENSITY IN NONDEGENERATE SILICON

被引：174

作者：

FOSSUM, JG

LEE, DS

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(82)90203-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：741 / 747

页数：7

共 24 条

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[6]

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[8]

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